E2G2TAB #110. t=0.5元器件交易网www.cecb2b.com
MITSUBISHI IGBT MODULES
CM200E3U-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)SymbolVCESVGESICICM
IE (Note 1)IEM (Note 1)PC (Note 3)VRRMIFIFMTjTstgViso
——
Parameter
Collector-emitter voltageGate-emitter voltageCollector currentEmitter current
Maximum collector dissipationRepetitive peak reverse voltageForward currentJunction temperatureStorage temperatureIsolation voltageTorque strengthWeightG-E ShortC-E ShortTC = 25°CPulse
TC = 25°CPulse
TC = 25°C
Clamp diode partTC = 25°CPulse
Conditions
Ratings1200±202004002004008301200200400–40 ~ +150–40 ~ +12525003.5 ~ 4.53.5 ~ 4.5400
UnitVVAAWVA°C°CVN • mN • mg
(Note 2)(Note 2)
Clamp diode partClamp diode part
(Note 2)
Main terminal to base plate, AC 1 min.Main Terminal M6Mounting holes M6Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)SymbolICESVGE(th)IGESVCE(sat)CiesCoesCresQGtd(on)tr
td(off)tf
trr (Note 1)Qrr (Note 1)VEC(Note 1)RG
Rth(j-c)QRth(j-c)RRth(j-c’)QVFMtrrQrrRth(j-c)RRth(c-f)
Parameter
Collector cutoff currentGate-emitter threshold voltageGate leakage currentCollector-emitter saturation voltageInput capacitanceOutput capacitance
Reverse transfer capacitanceTotal gate chargeTurn-on delay timeTurn-on rise timeTurn-off delay timeTurn-off fall time
Reverse recovery timeReverse recovery chargeEmitter-collector voltageExternal gate resistanceThermal resistance*1Thermal resistanceForward voltage dropReverse recovery timeReverse recovery chargeThermal resistance*1
Contact thermal resistance
Test conditions
VCE = VCES, VGE = 0VIC = 20mA, VCE = 10V
VGE = VCES, VCE = 0VTj = 25°C
IC = 200A, VGE = 15V
Tj = 125°CVCE = 10VVGE = 0V
VCC = 600V, IC = 200A, VGE = 15V
VCC = 600V, IC = 200AVGE1 = VGE2 = 15V
RG = 1.6Ω, Inductive load switching operationIE = 200A
IE = 200A, VGE = 0V
IGBT partFWDi part
Tc measured point is just under the chipsIF = 200A, Clamp diode partIF = 200A
VCC = 600V, VGE1 = VGE2 = 15V
RG = 1.6Ω, Inductive load switching operation,Clamp diode part
Clamp diode part
Case to fin, Thermal compound applied*2 (1/2 module)
Min.—5——————————————1.6————————
LimitsTyp.—6—1.81.9———2200—————12.2———————12.2—0.04
Max.17402.4—783.42.0—30080500300200—3.2160.150.180.091*33.2200—0.18—
UnitmAVµAVnFnCnsnsµCVΩ°C/WVnsµC°C/W
Note1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.1 : Tc measured point is indicated in OUTLINE DRAWING.*
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Mar.2002
元器件交易网www.cecb2b.com
MITSUBISHI IGBT MODULES
CM200E3U-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVESOUTPUT CHARACTERISTICS(TYPICAL)COLLECTOR-EMITTER SATURATIONVOLTAGE CHARACTERISTICS(TYPICAL)COLLECTOR CURRENT IC (A)Tj = 25°CVGE = 20V35030025020015010050000.511.522.581511109.5COLLECTOR-EMITTERSATURATION VOLTAGE VCE (sat) (V)400VGE = 15VTj = 25°C2.5Tj = 125°C21.510.50398.533.540100200300400COLLECTOR-EMITTER VOLTAGE VCE (V)COLLECTOR CURRENT IC (A)COLLECTOR-EMITTER SATURATIONVOLTAGE CHARACTERISTICS(TYPICAL)COLLECTOR-EMITTERSATURATION VOLTAGE VCE (sat) (V)543Tj = 25°CFREE-WHEEL DIODE AND CLAMP DIODEFORWARD CHARACTERISTICS(TYPICAL)3107Tj = 25°CEMITTER CURRENT IE (A)532IC = 400A210IC = 200AIC = 80A1027532681012141618201010.511.522.533.5GATE-EMITTER VOLTAGE VGE (V)EMITTER-COLLECTOR VOLTAGE VEC (V)CAPACITANCE–VCECHARACTERISTICS(TYPICAL)102HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)1037td(off)5tf3275327532CAPACITANCE Cies, Coes, Cres (nF)7532CiesSWITCHING TIMES (ns)td(on)1017532102trConditions:VCC = 600VVGE = ±15VRG = 1.6ΩTj = 125°CInductive load23571022357103CoesCres1007532101VGE = 0V10–1–110235710023571012357102COLLECTOR-EMITTER VOLTAGE VCE (V)100110COLLECTOR CURRENT IC (A)Mar.2002
元器件交易网www.cecb2b.com
MITSUBISHI IGBT MODULES
CM200E3U-24F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICSOF CLAMP DIODE(TYPICAL)TRANSIENT THERMALIMPEDANCE CHARACTERISTICS(IGBT part & FWDi part & CLAMP DIODE part)REVERSE RECOVERY TIME trr (ns)REVERSE RECOVERY CURRENT lrr (A)NORMALIZED TRANSIENTTHERMAL IMPEDANCE Zth (j–c) (°C/W)103753210–3235710–2235710–1235710023571011017IGBT part: Per unit base = Rth(j–c) = 0.15°C/W5FWDi part: Per unit base = Rth(j–c) = 0.18°C/W3CLAMP Di part: Per unit base = Rth(j–c) = 0.18°C/W27532753275321001027532Irrtrr10–110–17532753232101110Conditions:VCC = 600VVGE = ±15VRG = 1.6ΩTj = 25°CInductive load2357102235710310–210–2Single PulseTC = 25°C10–310–5235710–4235710–3TMIE (s)10–3EMITTER CURRENT IE (A)GATE CHARGE CHARACTERISTICS(TYPICAL)20GATE-EMITTER VOLTAGE VGE (V)1816141210864200IC = 200AVCC = 400VVCC = 600V50010001500200025003000GATE CHARGE QG (nC)Mar.2002
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