Chemical mechanical polishing slurry, its preparat

专利名称：Chemical mechanical polishing slurry, its

preparation method, and use for the same

发明人：Hui-Fang Hou,Wen-Cheng Liu,Yen-Liang

Chen,Jui-Ching Chen

申请号：US11892720申请日：20070827公开号：US08167684B2公开日：20120501

摘要：A chemical mechanical polishing slurry for polishing a copper layer withoutexcessively or destructively polishing a barrier layer beneath the copper layer is

disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particlesthat are surface modified with a surface charge modifier and that have potassium ionsattached thereto. A method for preparing the chemical mechanical polishing slurry and achemical mechanical polishing method using the chemical mechanical polishing slurry arealso disclosed.

申请人：Hui-Fang Hou,Wen-Cheng Liu,Yen-Liang Chen,Jui-Ching Chen

地址：Kaohsiung Science Park TW,Kaohsiung Science Park TW,Kaohsiung Science ParkTW,Kaohsiung Science Park TW

国籍：TW,TW,TW,TW

代理人：Thomas E. Omholt,Steven D. Weseman

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