D1217

BACE(2 pls)K1234FG8JTyp.765GOLD METALLISEDMULTI-PURPOSE SILICON

DMOS RF FET40W – 12.5V – 500MHz

PUSH–PULL

DMQFEATURES

•SIMPLIFIED AMPLIFIER DESIGN

•SUITABLE FOR BROAD BAND APPLICATIONS•LOWCrss

DRAIN 1

SOURCE (COMMON)GATE 2

SOURCE (COMMON)

Tol.0.0050.0055°0.0050.0050.0050.0100.0050.0050.0050.0050.0050.0050.0010.0250.005PINOHDD

PIN 1PIN 3PIN 5PIN 7

SOURCE (COMMON)DRAIN 2

SOURCE (COMMON)GATE 1DIMABCDEFGHIJKMNOPQmm9.1412.7045°6.860.769.7819.054.193.171.52R1.65R16.5122.860.136.3510.77PIN 2PIN 4PIN 6PIN 8

•SIMPLE BIAS CIRCUITS•LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

Tol.0.130.135°0.130.130.130.250.130.130.130.130.130.130.020.640.13Inches0.3600.50045°0.2700.0300.3850.7500.1650.1250.060R0.065R0.6500.9000.0050.2500.424APPLICATIONS

•HF/VHF/UHF COMMUNICATIONSfrom 1 MHz to 500 MHz

ABSOLUTE MAXIMUM RATINGS (Tcase= 25°C unlessotherwise stated)

PD

BVDSSBVGSSID(sat)TstgTj

Semelab plc.

Power DissipationDrain – Source Breakdown VoltageGate – Source Breakdown VoltageDrain Current

Storage Temperature

Maximum Operating Junction Temperature

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: sales@semelab.co.ukWebsite: http://www.semelab.co.uk175W40V±20V20A

–65 to 150°C

200°C

Prelim. 9/00

D1217UKELECTRICAL CHARACTERISTICS (Tcase= 25°C unlessotherwise stated)

ParameterTest ConditionsMin.PER SIDEBVDSSIDSSIGSSgfsGPShDrain–SourceBreakdown VoltageZero Gate VoltageDrain CurrentGate Leakage CurrentForward Transconductance*Common Source Power GainDrain EfficiencyVGS= 0VDS= 12.5VVGS= 20VID= 10mAVDS= 10VPO= 40WVDS= 12.5Vf = 400MHzIDQ= 1.6AID= 100mAVGS= 0VDS= 0VDS= VGSID= 2A11.6105020:1VGS= –5Vf = 1MHzf = 1MHzf = 1MHz40Typ.Max.UnitV215.5mAmAVSdB%—120808pFpFpFVGS(th)Gate Threshold Voltage*TOTAL DEVICEVSWRLoad Mismatch ToleranceCissCossCrssInput CapacitanceOutput CapacitanceReverse Transfer CapacitancePER SIDEVDS= 0VVDS= 12.5VVGS= 0VDS= 12.5VVGS= 0* Pulse Test:Pulse Duration = 300 ms , Duty Cycle £2%HAZARDOUS MATERIAL WARNINGThe ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area.THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.THERMAL DATARTHj–caseThermal Resistance Junction – CaseMax. 1.0°C / WSemelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.ukWebsite: http://www.semelab.co.ukPrelim. 9/00