专利名称：MANUFACTURING METHOD OF THIN FILM
TRANSISTOR
发明人：Shin-Chuan Chiang,Yu-Hao Lai,Huai-An Li申请号：US13117130申请日：20110526
公开号：US20120231588A1公开日：20120913
专利附图：
摘要：A manufacturing method of thin film transistors is provided. The manufacturingmethod includes: providing a substrate; forming a gate electrode; forming a gateinsulating layer; forming a patterned oxide semiconductor layer; forming a source
electrode and a drain electrode; and executing a localized laser treatment. A laser beamis used to irradiate at least a part of the patterned oxide semiconductor layer in thelocalized laser treatment. An electrical resistitivity of the patterned oxide semiconductorlayer irradiated by the laser beam is lower than an electrical resistitivity of the patternedoxide semiconductor layer without being irradiated by the laser beam.
申请人：Shin-Chuan Chiang,Yu-Hao Lai,Huai-An Li
地址：Taipei City TW,Taichung City TW,Taoyuan County TW
国籍：TW,TW,TW
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