MMBT5179资料

MPS5179 / MMBT5179 / PN5179Discrete POWER & SignalTechnologiesMPS5179MMBT5179CPN5179ECBTO-92ESOT-23Mark: 3CBCETO-92BNPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifierswith collector currents in the 100 µA to 30 mA range in commonemitter or common base mode of operation, and in low frequencydrift, high ouput UHF oscillators. Sourced from Process 40.Absolute Maximum Ratings* TA = 25°C unless otherwise notedSymbolVCEOVCBOVEBOICTJ, TstgCollector-Emitter VoltageCollector-Base VoltageEmitter-Base VoltageCollector Current - ContinuousOperating and Storage Junction Temperature RangeParameterValue12202.550-55 to +150UnitsVVVmA°C*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C unless otherwise notedSymbolPDRθJACharacteristicTotal Device DissipationDerate above 25°CThermal Resistance, Junction to AmbientMaxPN/MPS51793502.8357*MMBT51792251.8556UnitsmWmW/°C°C/W*Device mounted on FR-4 PCB 1.6\" X 1.6\" X 0.06.\"© 1997 Fairchild Semiconductor Corporation

5179, Rev B

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MPS5179 / MMBT5179 / PN5179NPN RF Transistor(continued)Electrical Characteristics TA = 25°C unless otherwise notedSymbolParameterTest ConditionsMinMaxUnitsOFF CHARACTERISTICSVCEO(sus)V(BR)CBOV(BR)EBOICBOCollector-Emitter Sustaining Voltage*Collector-Base Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cutoff CurrentIC = 3.0 mA, IB = 0IC = 1.0 µA, IE = 0IE = 10 µA, IC = 0VCB = 15 V, IE = 0VCB = 15 V, TA = 150°C12202.50.021.0VVVµAµAON CHARACTERISTICShFEVCE(sat)VBE(sat)DC Current GainCollector-Emitter Saturation VoltageBase-Emitter Saturation VoltageIC = 3.0 mA, VCE = 1.0 VIC = 10 mA, IB = 1.0 mAIC = 10 mA, IB = 1.0 mA252500.41.0VVSMALL SIGNAL CHARACTERISTICSfTCcbhferb’CcNFCurrent Gain - Bandwidth ProductCollector-Base CapacitanceSmall-Signal Current GainCollector Base Time ConstantNoise FigureIC = 5.0 mA, VCE = 6.0 V,f = 100 MHzVCB = 10 V, IE = 0, f = 0.1 to 1.0 MHzIC = 2.0 mA, VCE = 6.0 V,f = 1.0 kHzIC = 2.0 mA, VCB = 6.0 V,f = 31.9 MHzIC = 1.5 mA, VCE = 6.0 V,RS = 50Ω, f = 200 MHz90020001.0253.0300145.0psdBMHzpFFUNCTIONAL TESTGpePOAmplifier Power GainPower OutputVCE = 6.0 V, IC = 5.0 mA,f = 200 MHzVCB = 10 V, IE = 12 mA,f ≥ 500 MHz1520dBmW*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%Spice ModelNPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588nTf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10)元器件交易网www.cecb2b.com

MPS5179 / MMBT5179 / PN5179NPN RF Transistor(continued)DC Typical CharacteristicsVC S A T - COLLECTOR-EMITTER VOLTAGE (V)EDC Current Gainvs Collector Current250h F E - DC CURRENT GAIN125 °CCollector-Emitter SaturationVoltage vs Collector Current 0.2β = 10200150100- 40 ºC0.15125 °C25 °C0.125 °C5000.001V = 5VCE 0.01I - COLLECTOR CURRENT (A)C0.10.05- 40 ºC0.1110I - COLLECTOR CURRENT (mA)CP402030V E ( )- BASE-EMITTER ON VOLTAGE (V)BONVB S A T - BASE-EMITTER VOLTAGE (V)EBase-Emitter SaturationVoltage vs Collector Current 1.210.80.60.40.1110I - COLLECTOR CURRENT (mA)C2030- 40 ºC25 °C125 °CBase-Emitter ON Voltage vsCollector Current10.8- 40 ºC25 °C0.6125 °Cβ = 100.45VV =CE 0.20.010.1110I - COLLECTOR CURRENT (mA)C50Collector-Cutoff Currentvs Ambient TemperatureI B O - COLLECTOR CURRENT (nA)C100V = 20VCB1010.1255075100125ºT - AMBIENT TEMPERATURE ( C)A150元器件交易网www.cecb2b.com

MPS5179 / MMBT5179 / PN5179NPN RF Transistor(continued)AC Typical CharacteristicsPOWER DISSIPATION vsAMBIENT TEMPERATUREP - POWER DISSIPATION (mW)D350300250SOT-232001501005000255075100°TEMPERATURE ( C)125150TO-92Test Circuit50 pF(NOTE 2)175 pF500 mHz Outputinto 50ΩRFC(NOTE 1)NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch longNOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long1000 pF1000 pF2.2 KΩRFC- VCCVCCFIGURE 1: 500 MHz Oscillator Circuit