MMBT5401 TRANSISTOR (PNP)
= = SOT-23 SOT-23 Plastic-Encapsulate Transistors
FEATURES = z Complementary to MMBT5551 = 1. BASE 2. EMITTERz Ideal for medium power amplification and switching 3. COLLECTOR
=
MARKING: 2L
元器件配套服务中心：ｗｗｗ．ｔａｎ－ｅ．ｃｎMAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature -160 -150 -5 -0.6 0.3 150 -55-150 V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Symbol V(BR)CBOV(BR)CEOV(BR)EBOICBO IEBO hFE(1)
DC current gain
hFE(2) hFE(3)
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency
VCE(sat) VBE(sat)
Test conditions IC= -100μA,IE=0
Min
Max
Unit
-160 V IC= -1mA,IB0 -150 V IE= -10μA, IC=0
-5 V VCB=-120 V ,IE0 -0.1 μA VEB=-4V , IC0 -0.1 μA VCE= -5V, IC= -1mA 80
VCE= -5V, IC-10mA 100 300 VCE= -5V, IC-50mA 50 IC=-50 mA, IB= -5mA
IC= -50 mA, IB= -5mA
-0.5 -1
V V
fT
-5V, IC= -10mA VCE=
f=30MHz
100 MHz
A,May,2011
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