Method of and apparatus for measuring flatness of

专利名称：Method of and apparatus for measuring

flatness of semiconductor wafers that havenot been subjected to donor-killertreatment

发明人：Junichiro Higashi,Robert K. Graupner申请号：US08/684149申请日：19960719公开号：US06002262A公开日：19991214

摘要：A halogen lamp of illuminance 150,000 lux or greater and wavelength 1129 nmor less is provided in the vicinity of a probe of an electrostatic capacitative flatnessmeasuring instrument, and illuminates the surface of the wafer under measurement.When the light enters into the bulk, it is converted to excitation energy, which convertsthe valence electrons of the silicon into conduction electrons. Since the free electrons orpositive holes generated from the silicon are overwhelmingly more than the dopant oroxygen donors, the wafer exhibits characteristics similar to metal. That is, electrons areuniformly distributed in all parts of the wafer. When, in this state, the upper face andlower face of the wafer are measured, the relative dielectric constant is fixed in alllocations, so all the changes in electrical amount can be measured as changes in distancebetween the wafer and the probe. Thus, the accurate flatness measurement forsemiconductor wafers that have not been subjected to donor-killer treatment can beachieved by using an electrostatic capacitative flatness measuring instrument.

申请人：KOMATSU ELECTRONIC METALS CO., LTD.

代理机构：Welsh & Katz, Ltd.

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