专利名称：METHODS AND STRUCTURES FOR
PROCESSING SEMICONDUCTOR DEVICES
发明人：Sony Varghese申请号：US14134199申请日：20131219
公开号：US20150179493A1公开日：20150625
专利附图：
摘要：Methods of forming semiconductor structures include providing a polymericmaterial over a carrier substrate, bonding another substrate to the polymeric material,and lowering a temperature of the polymeric material to below about 15° C. to separatethe another substrate from the carrier substrate. Some methods include forming apolymeric material over a first substrate, securing a second substrate to the firstsubstrate over the polymeric material, cooling the polymeric material to a temperaturebelow a glass-transition temperature of the polymeric material, and separating thesecond substrate from the first substrate. Semiconductor structures may include apolymeric material over at least a portion of a first substrate, an adhesive material overthe polymeric material, and a second substrate over the adhesive material. The polymericmaterial may have a glass transition temperature of about 10° C. or lower and a melting
point of about 100° C. or greater.
申请人：Micron Technology, Inc.
地址：Boise ID US
国籍：US
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