Memory devices

专利名称：Memory devices

发明人：Miyaji, Fumio c/o Patents Division申请号：EP89301639.4申请日：19890220公开号：EP0331322A3公开日：19910612

专利附图：

摘要：A semiconductor memory device such as a static random access memory canattain high speed read-out of data therefrom without increasing the number ofproduction process steps. The memory device includes load element MOS transistors(46, 46) for precharging bit lines (BL1, BL2), and access MOS transistors (42, 43) selectively

controllable by a word line (WL) and connected to a memory cell (41). MOS transistors(47, 48) serve as variable load means, and a further MOS transistor (44) is provided toshort-circuit and thus equalise the bit lines (BL1, BL2). The semiconductor memory canfurther attain a flash-clearing function without increasing the chip size.

申请人：SONY CORPORATION

地址：7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 JP

国籍：JP

代理机构：Pilch, Adam John Michael

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