2N5401

SEMICONDUCTOR TECHNICAL DATA

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by 2N5400/D

Amplifier Transistors

PNP Silicon

2N54002N5401*

*Motorola Preferred Device

1MAXIMUM RATINGS

RatingCollector–Emitter VoltageCollector–Base VoltageEmitter–Base VoltageCollector Current — ContinuousTotal Device Dissipation @ TA = 25°CDerate above 25°CTotal Device Dissipation @ TC = 25°CDerate above 25°COperating and Storage JunctionTemperature RangeSymbolVCEOVCBOVEBOICPDPDTJ, Tstg2N54002N54011201305.06006255.01.512–55 to +150150160UnitVdcVdcVdcmAdcmWmW/°CWattsmW/°C°C23CASE 29–04, STYLE 1TO–92 (TO–226AA)THERMAL CHARACTERISTICS

CharacteristicThermal Resistance, Junction to AmbientThermal Resistance, Junction to CaseSymbolRqJARqJCMax20083.3Unit°C/W°C/WELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(1)(IC = 1.0 mAdc, IB = 0)Collector–Base Breakdown Voltage(IC = 100 mAdc, IE = 0)Emitter–Base Breakdown Voltage(IE = 10 mAdc, IC = 0)Collector Cutoff Current(VCB = 100 Vdc, IE = 0)(VCB = 120 Vdc, IE = 0)(VCB = 100 Vdc, IE = 0, TA = 100°C)(VCB = 120 Vdc, IE = 0, TA = 100°C)Emitter Cutoff Current(VEB = 3.0 Vdc, IC = 0)1.Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

2N54002N54012N54002N5401V(BR)CEOVdc1201501301605.0——Vdc———VdcV(BR)CBOV(BR)EBOICBO2N54002N54012N54002N5401—————100501005050nAdcµAdcnAdcIEBOMotorola Small–Signal Transistors, FETs and Diodes Device Data© Motorola, Inc. 1996 12N5400 2N5401ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)CharacteristicSymbolMinMaxUnitON CHARACTERISTICS(1)DC Current Gain(IC = 1.0 mAdc, VCE = 5.0 Vdc)(IC = 10 mAdc, VCE = 5.0 Vdc)(IC = 50 mAdc, VCE = 5.0 Vdc)Collector–Emitter Saturation Voltage(IC = 10 mAdc, IB = 1.0 mAdc)(IC = 50 mAdc, IB = 5.0 mAdc)Base–Emitter Saturation Voltage(IC = 10 mAdc, IB = 1.0 mAdc)(IC = 50 mAdc, IB = 5.0 mAdc)2N54002N54012N54002N54012N54002N5401VCE(sat)hFE—305040604050——————180240——Vdc0.20.5Vdc1.01.0VBE(sat)SMALL–SIGNAL CHARACTERISTICSCurrent–Gain — Bandwidth Product(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)Output Capacitance(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)Small–Signal Current Gain(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)Noise Figure(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)1.Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.2N54002N54012N54002N5401fTMHz100100—4003006.0pF—3040—2002008.0dBCobohfeNF 2Motorola Small–Signal Transistors, FETs and Diodes Device Data2N5400 2N5401200150TJ = 125°Ch F E , CURRENT GAIN1007050–55°C3020VCE = –1.0 VVCE = –5.0 V0.10.20.30.51.02.03.05.0IC, COLLECTOR CURRENT (mA)1020305010025°CFigure 1. DC Current GainVCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)1.00.90.80.70.60.50.40.30.20.100.0050.010.020.050.10.20.51.0IB, BASE CURRENT (mA)2.05.0102050IC = 1.0 mA10 mA30 mA100 mAFigure 2. Collector Saturation Region103IC, COLLECTOR CURRENT (µA)102101TJ = 125°C10010–110–210–30.375°CREVERSE25°CFORWARDVCE = 30 VIC = ICES0.20.100.10.20.30.40.5VBE, BASE–EMITTER VOLTAGE (VOLTS)0.60.7Figure 3. Collector Cut–Off RegionMotorola Small–Signal Transistors, FETs and Diodes Device Data 32N5400 2N5401θV, TEMPERATURE COEFFICIENT (mV/°C)1.00.90.8V, VOLTAGE (VOLTS)0.70.60.50.40.30.20.100.10.20.30.51.02.03.05.0102030IC, COLLECTOR CURRENT (mA)50100VCE(sat) @ IC/IB = 10VBE(sat) @ IC/IB = 10TJ = 25°C2.52.01.51.00.50–0.5–1.0–1.5–2.0–2.50.1θVB for VBE(sat)0.20.30.51.02.03.05.0102030IC, COLLECTOR CURRENT (mA)50100θVC for VCE(sat)TJ = –55°C to 135°CFigure 4. “On” VoltagesFigure 5. Temperature Coefficients10.2 VVin10 µsINPUT PULSEtr, tf ≤ 10 nsDUTY CYCLE = 1.0%0.25 µF100RB5.1 kVin1001N9143.0 kRCVoutC, CAPACITANCE (pF)VBB+8.8 VVCC–30 V10070503020107.05.03.02.01.00.20.32.03.05.07.00.50.71.0VR, REVERSE VOLTAGE (VOLTS)CiboTJ = 25°CCoboValues Shown are for IC @ 10 mA1020Figure 6. Switching Time Test CircuitFigure 7. Capacitances1000700500300t, TIME (ns)200100705030202000IC/IB = 10TJ = 25°Ctr @ VCC = 120 Vtr @ VCC = 30 Vt, TIME (ns)1000700500300200100705030100200200.20.30.51.02.03.05.010203050100200IC/IB = 10TJ = 25°Ctf @ VCC = 30 Vts @ VCC = 120 Vtf @ VCC = 120 Vtd @ VBE(off) = 1.0 VVCC = 120 V1.02.03.05.010203050100.20.30.5IC, COLLECTOR CURRENT (mA)IC, COLLECTOR CURRENT (mA)Figure 8. Turn–On TimeFigure 9. Turn–Off Time 4Motorola Small–Signal Transistors, FETs and Diodes Device Data2N5400 2N5401PACKAGE DIMENSIONSNOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION RIS UNCONTROLLED.4.DIMENSION F APPLIES BETWEEN P AND L.DIMENSION D AND J APPLY BETWEEN L AND KMINIMUM. LEAD DIMENSION IS UNCONTROLLEDIN P AND BEYOND DIMENSION K MINIMUM.INCHESMINMAX0.1750.2050.1700.2100.1250.1650.0160.0220.0160.0190.0450.0550.0950.1050.0150.0200.500–––0.250–––0.0800.105–––0.1000.115–––0.135–––MILLIMETERSMINMAX4.455.204.325.333.184.190.410.550.410.481.151.392.422.660.390.5012.70–––6.35–––2.042.66–––2.542.93–––3.43–––ARPSEATINGPLANEBFLKDXXHV1JGCNNSECTION X–XDIMABCDFGHJKLNPRVCASE 029–04(TO–226AA)ISSUE ADSTYLE 1:PIN 1.EMITTER2.BASE3.COLLECTORMotorola Small–Signal Transistors, FETs and Diodes Device Data 52N5400 2N5401

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Motorola Small–Signal Transistors, FETs and Diodes Device Data