2N5401

(PNP) 2N5401 TRANSISTOR

=

=

TO-92 Plastic-Encapsulate Transistors

TO-92

1.EMITTER 2.BASE

3.COLLECTOR

FEATURE =z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.160v)

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol Parameter Value UnitsVCBO VCEO VEBO IC PC Tj Tstg

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature

-160 -150 -5 -0.6 0.625 150 -55-150

V V V A W ℃ ℃

1 2 3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current

Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)

DC current gain

hFE(2) hFE(3)

Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency

Test conditions IC= -100μA, IE=0

MIN

TYP

MAX

UNIT

-160 V IC= -1mA, IB0 -150 V IE= -10μA, IC=0

-5 V VCB= -120 V, IE0 -50 nA

VEB= -3V, IC0 -50 nA VCE= -5V, IC=-1 mA VCE= -5V, IC= -10 mA VCE= -5V, IC=-50 mA

80 60 50

240 -0.5 -1

V V

VCE(sat) IC= -50mA, IB= -5 mA VBE(sat) IC= -50mA, IB= -5 mA fT

VCE=-5V, IC=-10mA f =30MHz

100 300 MHz

Typical Characteristics 2N5401