专利名称：Power Semiconductor Component, Power
Semiconductor Device As Well As MethodsFor Their Production
发明人：Josef Hoeglauer,Ralf Otremba,Xaver
Schloegel
申请号：US11736999申请日：20070418
公开号：US20070246838A1公开日：20071025
专利附图：
摘要：A power semiconductor component () has a semiconductor body with a front
face () and a rear face (). The front face () has a front-face metallization (), which providesat least one first contact pad (). A structured metal seed layer () is provided as the front-face metallization (), is arranged directly on the semiconductor body, and has a thicknessd, where 1 nm≦d≦0.5 μm.
申请人：Josef Hoeglauer,Ralf Otremba,Xaver Schloegel
地址：Muenchen DE,Kaufbeuren DE,Sachsenskam DE
国籍：DE,DE,DE
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