FDS4897C FDS4897C 13” ©2005 Fairchild Semiconductor Corporation FDS4897C Rev C(W)
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FDS4897C Dual N & P-Channel PowerTrench®MOSFETElectrical Characteristics Symbol EAS IAS TA = 25°C unless otherwise noted Parameter Test Conditions Type Min Typ Max UnitsDrain-Source Avalanche Energy (Single Pulse) Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VDD = 40 V, ID = 7.3 A, L = 1 mH Q1 27 mJ Drain-Source Avalanche Ratings (Note 3) Q2 38 mJ VDD = –40 V, ID =–8.7 A, L = 1 mH Q1 7.3 A Q2 –8.7 ID = 250 μA VGS = 0 V, ID = –250 μA VGS = 0 V, ID = 250 μA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 32 V, VGS = 0 V VDS = –32 V, VGS = 0 V VGS = ±20 V, VDS = 0 V Q1 Q2 Q1 Q2 40 –40 V 34 –40 Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS mV/°C Q1 1 μA Q2 –1 All nA ±100 1 1.9 3 –1 –1.7 –3 –5 4 V mV/°C mΩ Zero Gate Voltage Drain Current IGSS Gate-Body Leakage On Characteristics VGS(th) (Note 2) ID = 250 μA VDS = VGS, ID = –250 µA VDS = VGS, Gate Threshold Voltage ΔVGS(th)ID = 250 μA, Referenced to 25°C Temperature Coefficient ID = –250 µA, Referenced to 25°C ΔTJ RDS(on) Static Drain-Source VGS = 10 V, ID = 6.2 A ID = 4.8 A On-Resistance VGS = 4.5 V, VGS = 10 V, ID = 6.2 A, TJ = 125°C ID = –4.4 A VGS = –10 V, ID = –3.8 A VGS = –4.5 V, VGS = –10 V, ID = –4.4 A, TJ = 125°CgFS Forward Transconductance VDS = 10 V, ID = 6.2 A ID =–4.4 A VDS = –10 V, Gate Threshold Voltage Q1 Q2 Q1 Q2 Q1 21 29 26 36 29 43 Q2 37 46 50 63 55 73 Q1 21 S Q2 12 Q1 760 pF Q2 1050 Q1 100 pF Q2 140 Q1 60 pF Q2 70 Q1 1.2 Ω Q2 9 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Q1 VDS = 20 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = –20 V, VGS = 0 V, f = 1.0 MHz f = 1.0 MHz FDS4897C Rev C(W) www.fairchildsemi.com
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FDS4897C Dual N & P-Channel PowerTrench®MOSFETElectrical Characteristics (continued) TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VSD trr Qrr Q1 VDD = 20 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2 VDD = –20 V, ID = –1 A, VGS = –10V, RGEN = 6 Ω Q1 VDS = 20 V, ID = 6.2 A, VGS = 10 V Q2 VDS = –20 V, ID = –4.4 A,VGS =–10 VQ1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 9 18 ns 12 22 5 10 ns 15 27 23 37 ns 45 72 3 6 ns 18 32 14 20 nC 20 28 2.4 nC 3 2.8 nC 4 0.7 1.2 V –0.7 –1.2 17 ns 24 7 nC 12 Drain–Source Diode Characteristics Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) Voltage VGS = 0 V, IS = –1.3 A (Note 2) Q1 Diode Reverse Recovery IF = 6.2 A, diF/dt = 100 A/µs Time Q2 Diode Reverse Recovery IF = –4.4 A, diF/dt = 100 A/µs Charge Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°C/W when mounted on a .02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device. FDS4897C Rev C(W) www.fairchildsemi.com
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FDS4897C Dual N & P-Channel PowerTrench®MOSFETTypical Characteristics: Q1 (N-Channel) 203VGS = 10V4.0VRDS(ON), NORMALIZEDDRAIN-SOURCE ON-RESISTANCE3.5V2.62.21.83.5V1.410.600.511.52VDS, DRAIN TO SOURCE VOLTAGE (V)2.5VGS = 3.0V16ID, DRAIN CURRENT (A)126.0V4.5V83.0V44.0V4.5V 6.0V 10V004 812ID, DRAIN CURRENT (A)1620 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.071.6RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCEID = 7.0AVGS = 10VID = 3.5ARDS(ON), ON-RESISTANCE (OHM)0.060.050.040.031.41.21TA = 125oC0.8TA = 25C0.020.012o0.6-50-250255075100oTJ, JUNCTION TEMPERATURE (C)125150 468VGS, GATE TO SOURCE VOLTAGE (V)10 Figure 3. On-Resistance Variation with Temperature. 20Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100IS, REVERSE DRAIN CURRENT (A)VDS = 10VID, DRAIN CURRENT (A)151010.10.010.0010.0001VGS = 0VTA = 125oC25oC-55oC10TA = 125oC525oC011.522.53VGS, GATE TO SOURCE VOLTAGE (V)3.5-55Co0 0.20.40.60.81VSD, BODY DIODE FORWARD VOLTAGE (V)1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4897C Rev C(W)
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FDS4897C Dual N & P-Channel PowerTrench®MOSFETTypical Characteristics: Q1 (N-Channel) 10VGS, GATE-SOURCE VOLTAGE (V)ID = 7AVDS = 10V30VCAPACITANCE (pF)8001000f = 1 MHzVGS = 0 V820VCiss60064400Coss2002Crss0048Qg, GATE CHARGE (nC)1216005 1015202530VDS, DRAIN TO SOURCE VOLTAGE (V)3540 Figure 7. Gate Charge Characteristics. 100P(pk), PEAK TRANSIENT POWER (W)50Figure 8. Capacitance Characteristics. RDS(ON) LIMIT100μs1ms10ms100ms40ID, DRAIN CURRENT (A)10SINGLE PULSERθJA = 135°C/WTA = 25°C30110sDCVGS = 10.0VSINGLE PULSERθJA = 135oC/WTA = 25oC1s200.1100.010.1110VDS, DRAIN-SOURCE VOLTAGE (V)10000.0010.010.1 1t1, TIME (sec)101001000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 50I(pk), PEAK TRANSIENT CURRENT (A)100SINGLE PULSERθJA = 135°C/WTA = 25°C4030I(AS), AVALANCHE CURRENT (A)10 TJ = 25Co201000.0010.010.11t1, TIME (sec)10100100010.01 0.11tAV, TIME IN AVANCHE(ms)10 Figure 11. Single Pulse Maximum Peak Current. FDS4897C Rev C(W)
Figure 12. Unclamped Inductive Switching Capability. www.fairchildsemi.com
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FDS4897C Dual N & P-Channel PowerTrench®MOSFETTypical Characteristics: Q2 (P-Channel) 30VGS = -10V25-ID, DRAIN CURRENT (A)201510-6.0V2.6RDS(ON), NORMALIZEDDRAIN-SOURCE ON-RESISTANCE-4.5V-4.0V2.42.221.81.61.41.210.8051015202530 -4.0V -4.5V -6.0V -10VVGS = - 3.5V-3.5V-3.0V5000.511.522.533.544.5-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 13. On-Region Characteristics. Figure 14. On-Resistance Variation with Drain Current and Gate Voltage. 0.14RDS(ON), ON-RESISTANCE (OHM)1.6RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE1.51.41.31.21.110.90.80.70.6-50-250255075100oID = -4.4AVGS = - 10VID = -2.2A0.120.1TA = 125oC0.080.06TA = 25oC0.040.02125150246810TJ, JUNCTION TEMPERATURE (C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. On-Resistance Variation with Temperature. 25TA = -55oC-IS, REVERSE DRAIN CURRENT (A)VDS = -10V-ID, DRAIN CURRENT (A)20125oC1525oCFigure 16. On-Resistance Variation with Gate-to-Source Voltage. 1001010.10.010.0010.0001VGS = 0VTA = 125oC25oC-55oC10501.522.533.544.5-VGS, GATE TO SOURCE VOLTAGE (V)00.20.40.60.811.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 17. Transfer Characteristics. Figure 18. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4897C Rev C(W)
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FDS4897C Dual N & P-Channel PowerTrench®MOSFETTypical Characteristics: Q2 (P-Channel) 10-VGS, GATE-SOURCE VOLTAGE (V)1400ID = -4.4A8VDS = -10V-20VCAPACITANCE (pF)12001000800600400200CISSf = 1 MHzVGS = 0 V-30V642COSSCRSS00510152025Qg, GATE CHARGE (nC)00510152025303540 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 19. Gate Charge Characteristics. 100P(pk), PEAK TRANSIENT POWER (W)Figure 20. Capacitance Characteristics. 50-ID, DRAIN CURRENT (A)RDS(ON) LIMIT101ms10ms100ms100μ40SINGLE PULSERθJA = 135°C/WTA = 25°C301DC0.1VGS = -10VSINGLE PULSERθJA = 135oC/WTA = 25C0.010.11o1s10s20101010000.0010.010.11t1, TIME (sec)101001000-VDS, DRAIN-SOURCE VOLTAGE (V) Figure 21. Maximum Safe Operating Area. Figure 22. Single Pulse Maximum Power Dissipation. 100P(pk), PEAK TRANSIENT CURRENT (A)40SINGLE PULSERθJA = 135°C/WTA = 25°C30I(AS), AVALANCHE CURRENT (A) TJ = 25Co20101000.0010.010.11t1, TIME (sec)10100100010.010.11tAV, TIME IN AVANCHE(ms)10Figure 23. Single Pulse Maximum Peak Current Figure 24. Unclamped Inductive Switching Capability FDS4897C Rev C(W)
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FDS4897C Dual N & P-Channel PowerTrench®MOSFETTypical Characteristics : N and P-Channel r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE1D = 0.50.2RθJA(t) = r(t) * RθJARθJA = 135C/WP(pk)t1t2TJ - TA = P * RθJA(t)Duty Cycle, D = t1 / t2o0.10.10.050.020.010.01SINGLE PULSE0.0010.00010.0010.010.1t1, TIME (sec)1101001000Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4897C Rev C(W) www.fairchildsemi.com
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This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
This datasheet contains preliminary data, and
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