MBRM120E

Surface Mount

Schottky Power Rectifier

POWERMITE®

Power Surface Mount Package

The Schottky Powermite employs the Schottky Barrier principlewith a barrier metal and epitaxial construction that produces optimalforward voltage drop–reverse current tradeoff. The advancedpackaging techniques provide for a highly efficient micro miniature,space saving surface mount Rectifier. With its unique heatsink design,the Powermite has the same thermal performance as the SMA whilebeing 50% smaller in footprint area, and delivering one of the lowestheight profiles, < 1.1 mm in the industry. Because of its small size, it isideal for use in portable and battery powered products such as cellularand cordless phones, chargers, notebook computers, printers, PDAsand PCMCIA cards. Typical applications are ac/dc and dc–dcconverters, reverse battery protection, and “Oring” of multiple supplyvoltages and any other application where performance and size arecritical.

Features:

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SCHOTTKY BARRIER

RECTIFIER1.0 AMPERES20 VOLTS

CATHODEPOWERMITECASE 457PLASTIC

ANODE

•••••••••••

Low Profile – Maximum Height of 1.1 mmSmall Footprint – Footprint Area of 8.45 mm2

Low VF Provides Higher Efficiency and Extends Battery LifeSupplied in 12 mm Tape and Reel

Low Thermal Resistance with Direct Thermal Path of Die onExposed Cathode Heat Sink

Powermite is JEDEC Registered as DO–216AACase: Molded Epoxy

Epoxy Meets UL94V–0 at 1/8″Weight: 62 mg (approximately)Device Marking: BCV

Lead and Mounting Surface Temperature for Soldering Purposes.260°C Maximum for 10 Seconds

MARKING DIAGRAM

Mechanical Characteristics:

MBCV

BCVM= Device Code= Date Code

ORDERING INFORMATION

Device

Package

Shipping3000/Tape & Reel

MAXIMUM RATINGS

Please See the Table on the Following PageMBRM120ET1POWERMITE

MBRM120ET3POWERMITE12,000/Tape & Reel

© Semiconductor Components Industries, LLC, 20011

November, 2001 – Rev. 0

Publication Order Number:

MBRM120E/D

MBRM120E

MAXIMUM RATINGS

RatingPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageAverage Rectified Forward Current (At Rated VR, TC = 130°C)Peak Repetitive Forward Current(At Rated VR, Square Wave, 20 kHz, TC = 135°C)Non–Repetitive Peak Surge Current(Non–Repetitive peak surge current, halfwave, single phase, 60 Hz)Storage TemperatureOperating Junction TemperatureVoltage Rate of Change (Rated VR, TJ = 25°C)SymbolVRRMVRWMVRIOIFRMIFSMTstgTJdv/dtValue20UnitV1.02.050–65 to 150–65 to 15010,000AAA°C°CV/msTHERMAL CHARACTERISTICS

Thermal Resistance – Junction–to–Lead (Anode) (Note 1)Thermal Resistance – Junction–to–Tab (Cathode) (Note 1)Thermal Resistance – Junction–to–Ambient (Note 1)RtjlRtjtabRtja3523277°C/W1.Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10.ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A)Maximum Instantaneous Reverse Current (Note 2), See Figure 4 (VR = 20 V) (VR = 10 V) (VR = 5.0 V)2.Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤2%.IRVFTJ = 25°C0.4550.5300.595TJ = 25°C101.00.5TJ = 100°C0.3600.4550.540TJ = 100°C1600500300mAVhttp://onsemi.com

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MBRM120E

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)iF, INSTANTANEOUS FORWARD CURRENT (AMPS)10

TJ = 150°CTJ = 100°CTJ = 25°CTJ = –40°C1.0

10TJ = 150°CTJ = 100°C1.0TJ = 25°C0.1

0.20.40.60.8vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)0.10.20.40.60.8VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE(VOLTS)Figure 1. Typical Forward VoltageIR, MAXIMUM REVERSE CURRENT (AMPS)Figure 2. Maximum Forward Voltage100E–3IR, REVERSE CURRENT (AMPS)10E–31E–3TJ = 150°CTJ = 100°C100E–310E–31E–3TJ = 150°CTJ = 100°C100E–610E–61E–6100E–610E–61E–6TJ = 25°C100E–910E–90

5.0

TJ = 25°C100E–910E–90

5.0

10

15

20

101520

VR, REVERSE VOLTAGE (VOLTS)VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse CurrentFigure 4. Maximum Reverse Current

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MBRM120E

IO, AVERAGE FORWARD CURRENT (AMPS)1.81.61.41.21.00.80.60.40.2025

45

65

85

105

SQUARE WAVEIpk/Io = pIpk/Io = 5Ipk/Io = 10Ipk/Io = 20dcPFO, AVERAGE DISSIPATION (WATTS)FREQ = 20 kHz0.70.6

Ipk/Io = p0.5

Ipk/Io = 50.4

Ipk/Io = 100.30.20.100

0.2

0.4

0.6

0.8

1.0

1.2

Ipk/Io = 20SQUAREWAVEdc1251451651.41.6

TL, LEAD TEMPERATURE (°C)IO, AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Current DeratingFigure 6. Forward Power Dissipation

TJ, DERATED OPERATING TEMPERATURE(_C)1000150Rtja = 33.72°C/WC, CAPACITANCE (pF)TJ = 25°C51°C/W69°C/W83.53°C/W96°C/W148100

14610

0

2.0

4.0

6.0

8.0

10

12

14

16

18

20

VR, REVERSE VOLTAGE (VOLTS)

1440

2.0

4.0

6.0

8.0

10

12

14

16

18

20

VR, DC REVERSE VOLTAGE (VOLTS)

Figure 7. CapacitanceFigure 8. Typical Operating Temperature Derating*

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operatingTJ may be calculated from the equation:TJ = TJmax – r(t)(Pf + Pr) where

r(t) = thermal impedance under given conditions,Pf = forward power dissipation, andPr = reverse power dissipation

This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr,where r(t) = Rthja. For other power applications further calculations must be performed.

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MBRM120E

R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)1.050%0.120%10%5.0%2.0%1.0%Rtjl(t) = Rtjl*r(t)0.010.0010.00001

0.00010.0010.01T, TIME (s)

0.11.010100

Figure 9. Thermal Response Junction to Lead

R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)1.0

50%20%0.1

10%5.0%0.01

2.0%Rtjl(t) = Rtjl*r(t)1.0%0.001

0.00001

0.00010.0010.010.1

T, TIME (s)

1.0101001,000

Figure 10. Thermal Response Junction to Ambient

0.1052.670.0250.6350.0300.7620.1002.54inchesmmMinimum Recommended Footprint

0.0501.27http://onsemi.com

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MBRM120E

PACKAGE DIMENSIONS

POWERMITEPLASTIC PACKAGECASE 457–04ISSUE D

–A–CJSF0.08 (0.003)MTBSCSNOTES:

1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2.CONTROLLING DIMENSION: MILLIMETER.

3.DIMENSION A DOES NOT INCLUDE MOLD FLASH,PROTRUSIONS OR GATE BURRS. MOLD FLASH,PROTRUSIONS OR GATE BURRS SHALL NOTEXCEED 0.15 (0.006) PER SIDE.

DIMABCDFHJKLRSMILLIMETERSINCHESMINMAXMINMAX1.752.050.0690.0811.752.180.0690.0860.851.150.0330.0450.400.690.0160.0270.701.000.0280.039-0.05+0.10-0.002+0.0040.100.250.0040.0103.603.900.1420.1540.500.800.0200.0311.201.500.0470.0590.50 REF0.019 REF–B–KTERM. 1TERM. 2RJH–T–LD0.08 (0.003)MTBSCShttp://onsemi.com

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MBRM120E

Noteshttp://onsemi.com

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MBRM120E

POWERMITE is a registered trademark of and used under a license from MicroSemi Corporation.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changeswithout further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must bevalidated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury ordeath may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and holdSCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonableattorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claimalleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone: 81–3–5740–2700Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.comFor additional information, please contact your localSales Representative.http://onsemi.com8MBRM120E/D